R6011KNX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Case Connection :

Isolated

DS Breakdown Voltage-Min :

600V

Packaging :

Bulk

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

18 Weeks

Published :

2015

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Power Dissipation-Max :

53W Tc

Avalanche Energy Rating (Eas) :

210 mJ

FET Type :

N-Channel

Threshold Voltage :

5V

Surface Mount :

No

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

740pF @ 25V

Drain to Source Voltage (Vdss) :

600V

Vgs(th) (Max) @ Id :

5V @ 1mA

Number of Elements :

1

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

390m Ω @ 3.8A, 10V

Continuous Drain Current (ID) :

11A

Package / Case :

TO-220-3 Full Pack