R6011KNJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

600V

FET Type :

N-Channel

Factory Lead Time :

20 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Published :

2015

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Drain to Source Voltage (Vdss) :

600V

Threshold Voltage :

5V

Input Capacitance (Ciss) (Max) @ Vds :

740pF @ 25V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Power Dissipation-Max :

124W Tc

Vgs(th) (Max) @ Id :

5V @ 1mA

Number of Pins :

3

Continuous Drain Current (ID) :

11A

ECCN Code :

EAR99

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Terminations :

2

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

390m Ω @ 3.8A, 10V

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

Avalanche Energy Rating (Eas) :

210 mJ

Vgs (Max) :

±20V

Packaging :

Cut Tape (CT)

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single