QSX6TR
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- Mfr.Part #
- QSX6TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS NPN 30V 1.5A TSMT6
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 1.25W
- Polarity/Channel Type :
- NPN
- Current Rating :
- 1.5A
- Number of Elements :
- 1
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Collector Emitter Voltage (VCEO) :
- 30V
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 30V
- Continuous Collector Current :
- 1.5A
- Transition Frequency :
- 300MHz
- Number of Terminations :
- 6
- Factory Lead Time :
- 20 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 50mA, 1A
- Collector Emitter Saturation Voltage :
- 140mV
- JESD-609 Code :
- e1
- Time@Peak Reflow Temperature-Max (s) :
- 10
- hFE Min :
- 270
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 30V
- Max Collector Current :
- 1.5A
- ECCN Code :
- EAR99
- Published :
- 2004
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 30V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- TIN SILVER COPPER
- Terminal Position :
- Dual
- Base Part Number :
- QSX
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Application :
- AMPLIFIER
- Collector Base Voltage (VCBO) :
- 30V
- Number of Pins :
- 6
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 300MHz
- Packaging :
- Tape and Reel (TR)
- Datasheets
- QSX6TR
NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
QSX6TR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 140mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 50mA, 1A.Continuous collector voltages of 1.5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1.5A volts.
QSX6TR Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 140mV
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 300MHz
QSX6TR Applications
There are a lot of ROHM Semiconductor
QSX6TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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