QSX6TR
- Mfr.Part #
- QSX6TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS NPN 30V 1.5A TSMT6
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Max Collector Current :
- 1.5A
- Terminal Position :
- Dual
- JESD-609 Code :
- e1
- Base Part Number :
- QSX
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 30V
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Collector Base Voltage (VCBO) :
- 30V
- Terminal Finish :
- TIN SILVER COPPER
- Number of Pins :
- 6
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 140mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Factory Lead Time :
- 20 Weeks
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 50mA, 1A
- Number of Elements :
- 1
- Transition Frequency :
- 300MHz
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 30V
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 300MHz
- Current Rating :
- 1.5A
- Emitter Base Voltage (VEBO) :
- 6V
- hFE Min :
- 270
- Max Power Dissipation :
- 1.25W
- Number of Terminations :
- 6
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 30V
- Transistor Element Material :
- SILICON
- Continuous Collector Current :
- 1.5A
- Voltage - Rated DC :
- 30V
- Element Configuration :
- Single
- Published :
- 2004
- Transistor Application :
- AMPLIFIER
- Pbfree Code :
- yes
- Datasheets
- QSX6TR

NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
QSX6TR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 140mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 50mA, 1A.Continuous collector voltages of 1.5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1.5A volts.
QSX6TR Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 140mV
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 300MHz
QSX6TR Applications
There are a lot of ROHM Semiconductor
QSX6TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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