QSX6TR
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- Mfr.Part #
- QSX6TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS NPN 30V 1.5A TSMT6
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 10
- hFE Min :
- 270
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 6
- Transition Frequency :
- 300MHz
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 30V
- Collector Base Voltage (VCBO) :
- 30V
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Factory Lead Time :
- 20 Weeks
- Max Power Dissipation :
- 1.25W
- Number of Terminations :
- 6
- Collector Emitter Saturation Voltage :
- 140mV
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 50mA, 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Mounting Type :
- Surface Mount
- Current Rating :
- 1.5A
- Pbfree Code :
- yes
- Base Part Number :
- QSX
- JESD-609 Code :
- e1
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 30V
- Polarity/Channel Type :
- NPN
- Continuous Collector Current :
- 1.5A
- Collector Emitter Breakdown Voltage :
- 30V
- Voltage - Rated DC :
- 30V
- Lead Free :
- Lead Free
- Max Collector Current :
- 1.5A
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- TIN SILVER COPPER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 300MHz
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- Published :
- 2004
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- QSX6TR
NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
QSX6TR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 140mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 50mA, 1A.Continuous collector voltages of 1.5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1.5A volts.
QSX6TR Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 140mV
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 300MHz
QSX6TR Applications
There are a lot of ROHM Semiconductor
QSX6TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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