QSX6TR
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- Mfr.Part #
- QSX6TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS NPN 30V 1.5A TSMT6
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Published :
- 2004
- Radiation Hardening :
- No
- Current Rating :
- 1.5A
- Base Part Number :
- QSX
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Number of Pins :
- 6
- Voltage - Rated DC :
- 30V
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 300MHz
- Max Breakdown Voltage :
- 30V
- Max Power Dissipation :
- 1.25W
- Collector Emitter Voltage (VCEO) :
- 30V
- Transistor Application :
- AMPLIFIER
- hFE Min :
- 270
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Number of Terminations :
- 6
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Terminal Finish :
- TIN SILVER COPPER
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Factory Lead Time :
- 20 Weeks
- JESD-609 Code :
- e1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Gain Bandwidth Product :
- 300MHz
- Collector Emitter Saturation Voltage :
- 140mV
- Pbfree Code :
- yes
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 50mA, 1A
- Collector Base Voltage (VCBO) :
- 30V
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 30V
- Element Configuration :
- Single
- Max Collector Current :
- 1.5A
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- Continuous Collector Current :
- 1.5A
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- QSX6TR
NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
QSX6TR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 140mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 50mA, 1A.Continuous collector voltages of 1.5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1.5A volts.
QSX6TR Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 140mV
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 300MHz
QSX6TR Applications
There are a lot of ROHM Semiconductor
QSX6TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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