QSX5TR
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- Mfr.Part #
- QSX5TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS NPN 12V 2A TSMT6
- Stock
- 6,637
- In Stock ：
- 6,637
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 12V
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 360MHz
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Gain Bandwidth Product :
- 360MHz
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Published :
- 2004
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 90mV
- hFE Min :
- 270
- Pbfree Code :
- yes
- Terminal Finish :
- TIN SILVER COPPER
- JESD-609 Code :
- e1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 2A
- Max Breakdown Voltage :
- 12V
- Max Power Dissipation :
- 1.25W
- HTS Code :
- 8541.21.00.75
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- Voltage - Rated DC :
- -12V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Collector Emitter Voltage (VCEO) :
- 12V
- Current Rating :
- 2A
- Transistor Application :
- AMPLIFIER
- Number of Pins :
- 6
- Base Part Number :
- QSX
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 6
- Emitter Base Voltage (VEBO) :
- 6V
- Vce Saturation (Max) @ Ib, Ic :
- 180mV @ 50mA, 1A
- Collector Base Voltage (VCBO) :
- 15V
- Polarity/Channel Type :
- NPN
- Datasheets
- QSX5TR
NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
QSX5TR Overview
In this device, the DC current gain is 270 @ 200mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 90mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 180mV @ 50mA, 1A.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 360MHz.Input voltage breakdown is available at 12V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
QSX5TR Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 180mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 360MHz
QSX5TR Applications
There are a lot of ROHM Semiconductor
QSX5TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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