QSX5TR
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- Mfr.Part #
- QSX5TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS NPN 12V 2A TSMT6
- Stock
- 6,637
- In Stock ：
- 6,637
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Current Rating :
- 2A
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Emitter Base Voltage (VEBO) :
- 6V
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Published :
- 2004
- Collector Emitter Breakdown Voltage :
- 12V
- Terminal Finish :
- TIN SILVER COPPER
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- Transistor Application :
- AMPLIFIER
- Terminal Form :
- Gull wing
- HTS Code :
- 8541.21.00.75
- Mount :
- Surface Mount
- Base Part Number :
- QSX
- Max Collector Current :
- 2A
- Transition Frequency :
- 360MHz
- Number of Terminations :
- 6
- Collector Emitter Saturation Voltage :
- 90mV
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 12V
- Gain Bandwidth Product :
- 360MHz
- Max Power Dissipation :
- 1.25W
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- hFE Min :
- 270
- Voltage - Rated DC :
- -12V
- Collector Base Voltage (VCBO) :
- 15V
- Vce Saturation (Max) @ Ib, Ic :
- 180mV @ 50mA, 1A
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 12V
- Number of Pins :
- 6
- JESD-609 Code :
- e1
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- QSX5TR
NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
QSX5TR Overview
In this device, the DC current gain is 270 @ 200mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 90mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 180mV @ 50mA, 1A.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 360MHz.Input voltage breakdown is available at 12V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
QSX5TR Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 180mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 360MHz
QSX5TR Applications
There are a lot of ROHM Semiconductor
QSX5TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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