QSX4TR
- Mfr.Part #
- QSX4TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS NPN 30V 2A TSMT6
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Collector Emitter Breakdown Voltage :
- 30V
- Collector Base Voltage (VCBO) :
- 30V
- Number of Terminations :
- 6
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- Number of Pins :
- 6
- Element Configuration :
- Single
- Base Part Number :
- QSX
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Published :
- 2005
- Gain Bandwidth Product :
- 280MHz
- Max Power Dissipation :
- 1.25W
- Transistor Type :
- NPN
- Current - Collector (Ic) (Max) :
- 2A
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 370mV @ 75mA, 1.5A
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e1
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 30V
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Element Material :
- SILICON
- Pin Count :
- 6
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 2A
- Transition Frequency :
- 280MHz
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 270
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- QSX4TR

NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
QSX4TR Overview
This device has a DC current gain of 270 @ 200mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 370mV @ 75mA, 1.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As you can see, the part has a transition frequency of 280MHz.A maximum collector current of 2A volts is possible.
QSX4TR Features
the DC current gain for this device is 270 @ 200mA 2V
the vce saturation(Max) is 370mV @ 75mA, 1.5A
the emitter base voltage is kept at 6V
a transition frequency of 280MHz
QSX4TR Applications
There are a lot of ROHM Semiconductor
QSX4TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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