QSX2TR
- Mfr.Part #
- QSX2TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS NPN 30V 5A TSMT6
- Stock
- 2
- In Stock :
- 2
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 20 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 500mA 2V
- Max Power Dissipation :
- 1.25W
- Gain Bandwidth Product :
- 200MHz
- Terminal Position :
- Dual
- Base Part Number :
- QSX
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 40mA, 2A
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 6
- Power - Max :
- 500mW
- Number of Terminations :
- 6
- Emitter Base Voltage (VEBO) :
- 6V
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 30V
- Pin Count :
- 6
- JESD-609 Code :
- e1
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Published :
- 2013
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 30V
- Transition Frequency :
- 200MHz
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Element Configuration :
- Single
- Max Collector Current :
- 5A
- hFE Min :
- 270
- Current - Collector (Ic) (Max) :
- 5A
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Element Material :
- SILICON
- Datasheets
- QSX2TR

NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
QSX2TR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 40mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 200MHz.During maximum operation, collector current can be as low as 5A volts.
QSX2TR Features
the DC current gain for this device is 270 @ 500mA 2V
the vce saturation(Max) is 250mV @ 40mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 200MHz
QSX2TR Applications
There are a lot of ROHM Semiconductor
QSX2TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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