QST9TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

-30V

JESD-609 Code :

e1

Factory Lead Time :

20 Weeks

Collector Emitter Voltage (VCEO) :

350mV

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

-150mV

Time@Peak Reflow Temperature-Max (s) :

10

Polarity :

PNP

Transistor Application :

AMPLIFIER

Pbfree Code :

yes

Current - Collector (Ic) (Max) :

1A

Emitter Base Voltage (VEBO) :

-6V

Number of Terminations :

6

Max Power Dissipation :

1.25W

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 100mA 2V

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

100nA ICBO

Base Part Number :

QST

Published :

2004

hFE Min :

270

Number of Elements :

2

Operating Temperature :

150°C TJ

Transition Frequency :

320MHz

Transistor Type :

2 PNP (Dual)

Mount :

Surface Mount

Element Configuration :

Dual

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Gain Bandwidth Product :

320MHz

Vce Saturation (Max) @ Ib, Ic :

350mV @ 25mA, 500mA

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

30V

Continuous Collector Current :

-1A

Number of Pins :

6

Pin Count :

6

Max Collector Current :

1A