QST8TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 200mA 2V

Published :

2004

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

AMPLIFIER

Transition Frequency :

400MHz

Number of Pins :

6

Collector Emitter Voltage (VCEO) :

200mV

Number of Terminations :

6

Max Collector Current :

1.5A

Factory Lead Time :

20 Weeks

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

hFE Min :

270

Transistor Element Material :

SILICON

Continuous Collector Current :

-1.5A

Vce Saturation (Max) @ Ib, Ic :

200mV @ 25mA, 500mA

Pin Count :

6

Time@Peak Reflow Temperature-Max (s) :

10

Max Power Dissipation :

1.25W

Collector Base Voltage (VCBO) :

-15V

Lead Free :

Lead Free

Package / Case :

SOT-23-6 Thin, TSOT-23-6

JESD-609 Code :

e1

Polarity :

PNP

Operating Temperature :

150°C TJ

Emitter Base Voltage (VEBO) :

-6V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Transistor Type :

2 PNP (Dual)

Power - Max :

1.25W

Element Configuration :

Dual

Radiation Hardening :

No

Max Breakdown Voltage :

12V

Base Part Number :

QST

Terminal Form :

Gull wing

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

12V

Pbfree Code :

yes

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Collector Emitter Saturation Voltage :

-85mV

Current - Collector Cutoff (Max) :

100nA ICBO

Gain Bandwidth Product :

400MHz