QST7TR
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- Mfr.Part #
- QST7TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 30V 1.5A TSMT6
- Stock
- 2,899
- In Stock ：
- 2,899
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- -200mV
- Voltage - Rated DC :
- -30V
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Collector Emitter Breakdown Voltage :
- 30V
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 280MHz
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 500mW
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 30V
- Power - Max :
- 500mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- -30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Max Collector Current :
- 1.5A
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Number of Terminations :
- 6
- hFE Min :
- 270
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Terminal Finish :
- TIN SILVER COPPER
- Vce Saturation (Max) @ Ib, Ic :
- 370mV @ 50mA, 1A
- Continuous Collector Current :
- -1.5A
- JESD-609 Code :
- e1
- Emitter Base Voltage (VEBO) :
- -6V
- Base Part Number :
- QST
- Current Rating :
- -1.5A
- Published :
- 2003
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 280MHz
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 370mV
- Lead Free :
- Lead Free
- Number of Pins :
- 6
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- QST7TR
PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
QST7TR Overview
In this device, the DC current gain is 270 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 370mV @ 50mA, 1A.A -1.5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1.5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 280MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
QST7TR Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 370mV @ 50mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -1.5A
a transition frequency of 280MHz
QST7TR Applications
There are a lot of ROHM Semiconductor
QST7TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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