QST4TR
- Mfr.Part #
- QST4TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 12V 3A TSMT6
- Stock
- 2,256
- In Stock :
- 2,256
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2005
- Transition Frequency :
- 280MHz
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Base Part Number :
- QST
- Emitter Base Voltage (VEBO) :
- 6V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 30mA, 1.5A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 3A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 500mA 2V
- Terminal Position :
- Dual
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 6
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 12V
- Transistor Type :
- PNP
- Gain Bandwidth Product :
- 280MHz
- Max Power Dissipation :
- 1.25W
- Collector Base Voltage (VCBO) :
- 15V
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 6
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Number of Terminations :
- 6
- Current - Collector (Ic) (Max) :
- 3A
- Terminal Form :
- Gull wing
- hFE Min :
- 270
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 12V
- JESD-609 Code :
- e1
- Datasheets
- QST4TR

PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
QST4TR Overview
In this device, the DC current gain is 270 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 30mA, 1.5A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 280MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
QST4TR Features
the DC current gain for this device is 270 @ 500mA 2V
the vce saturation(Max) is 250mV @ 30mA, 1.5A
the emitter base voltage is kept at 6V
a transition frequency of 280MHz
QST4TR Applications
There are a lot of ROHM Semiconductor
QST4TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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