QSL9TR
- Mfr.Part #
- QSL9TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-5 Thin, TSOT-23-5
- Datasheet
- Download
- Description
- TRANS PNP 12V 1.5A TSMT5
- Stock
- 20,168
- In Stock :
- 20,168
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity :
- PNP
- Max Power Dissipation :
- 1.25W
- Current - Collector (Ic) (Max) :
- 1.5A
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 15V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 400MHz
- Power - Max :
- 500mW
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Package / Case :
- SOT-23-5 Thin, TSOT-23-5
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Max Collector Current :
- 1.5A
- Published :
- 2005
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Pins :
- 5
- Pin Count :
- 5
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Transistor Type :
- PNP + Diode (Isolated)
- Collector Emitter Voltage (VCEO) :
- 12V
- Transistor Element Material :
- SILICON
- Terminal Finish :
- TIN SILVER COPPER
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 12V
- JESD-609 Code :
- e1
- Transition Frequency :
- 400MHz
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 25mA, 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- Number of Terminations :
- 5
- Radiation Hardening :
- No
- Datasheets
- QSL9TR

PNP + Diode (Isolated) 150°C TJ 100nA ICBO 1 Elements 5 Terminations SILICON SOT-23-5 Thin, TSOT-23-5 Tape & Reel (TR) Surface Mount
QSL9TR Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 270 @ 200mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 25mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 400MHz.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
QSL9TR Features
the DC current gain for this device is 270 @ 200mA 2V
the vce saturation(Max) is 200mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 400MHz
QSL9TR Applications
There are a lot of ROHM Semiconductor
QSL9TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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