QSL12TR
- Mfr.Part #
- QSL12TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-5 Thin, TSOT-23-5
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A TSMT5
- Stock
- 3,746
- In Stock :
- 3,746
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 500mW
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 320MHz
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Voltage (VCEO) :
- 30V
- Number of Elements :
- 1
- Number of Terminations :
- 5
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Max Collector Current :
- 1A
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Type :
- NPN + Diode (Isolated)
- Transition Frequency :
- 320MHz
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e1
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 30V
- Transistor Application :
- SWITCHING
- Continuous Collector Current :
- 1A
- Number of Pins :
- 5
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 10
- hFE Min :
- 270
- Terminal Form :
- Gull wing
- Polarity :
- NPN
- Package / Case :
- SOT-23-5 Thin, TSOT-23-5
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 25mA, 500mA
- Pin Count :
- 5
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2005
- Collector Emitter Saturation Voltage :
- 120mV
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 30V
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Factory Lead Time :
- 20 Weeks
- Terminal Finish :
- TIN SILVER COPPER
- Datasheets
- QSL12TR

NPN + Diode (Isolated) 150°C TJ 100nA ICBO 1 Elements 5 Terminations SILICON SOT-23-5 Thin, TSOT-23-5 Tape & Reel (TR) Surface Mount
QSL12TR Overview
In this device, the DC current gain is 270 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 120mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 25mA, 500mA.Maintaining the continuous collector voltage at 1A is essential for high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.320MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.
QSL12TR Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 320MHz
QSL12TR Applications
There are a lot of ROHM Semiconductor
QSL12TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| QSL11TR | ROHM Semiconductor | 2,640 | TRANS PNP 30V 1A TSMT5 |
















