QSL12TR

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Mfr.Part #
QSL12TR
Manufacturer
ROHM Semiconductor
Package / Case
SOT-23-5 Thin, TSOT-23-5
Datasheet
Download
Description
TRANS NPN 30V 1A TSMT5
Stock
3,746
In Stock :
3,746

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Max Power Dissipation :
500mW
Mounting Type :
Surface Mount
Transistor Element Material :
SILICON
Mount :
Surface Mount
Gain Bandwidth Product :
320MHz
Element Configuration :
Single
Current - Collector Cutoff (Max) :
100nA ICBO
Collector Emitter Voltage (VCEO) :
30V
Number of Elements :
1
Number of Terminations :
5
DC Current Gain (hFE) (Min) @ Ic, Vce :
270 @ 100mA 2V
Max Collector Current :
1A
Pbfree Code :
yes
Emitter Base Voltage (VEBO) :
6V
Transistor Type :
NPN + Diode (Isolated)
Transition Frequency :
320MHz
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e1
Terminal Position :
Dual
Collector Base Voltage (VCBO) :
30V
Transistor Application :
SWITCHING
Continuous Collector Current :
1A
Number of Pins :
5
Peak Reflow Temperature (Cel) :
260
Time@Peak Reflow Temperature-Max (s) :
10
hFE Min :
270
Terminal Form :
Gull wing
Polarity :
NPN
Package / Case :
SOT-23-5 Thin, TSOT-23-5
Vce Saturation (Max) @ Ib, Ic :
350mV @ 25mA, 500mA
Pin Count :
5
RoHS Status :
ROHS3 Compliant
Published :
2005
Collector Emitter Saturation Voltage :
120mV
Operating Temperature :
150°C TJ
Collector Emitter Breakdown Voltage :
30V
Packaging :
Tape and Reel (TR)
Radiation Hardening :
No
Factory Lead Time :
20 Weeks
Terminal Finish :
TIN SILVER COPPER
Datasheets
QSL12TR
Introducing Transistors - Bipolar (BJT) - Single ROHM Semiconductor QSL12TR from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:5, Number of Pins:5, Package / Case:SOT-23-5 Thin, TSOT-23-5, Operating Temperature:150°C TJ, QSL12TR pinout, QSL12TR datasheet PDF, QSL12TR amp .Beyond Transistors - Bipolar (BJT) - Single ROHM Semiconductor QSL12TR ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor QSL12TR


NPN + Diode (Isolated) 150°C TJ 100nA ICBO 1 Elements 5 Terminations SILICON SOT-23-5 Thin, TSOT-23-5 Tape & Reel (TR) Surface Mount

QSL12TR Overview


In this device, the DC current gain is 270 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 120mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 25mA, 500mA.Maintaining the continuous collector voltage at 1A is essential for high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.320MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.

QSL12TR Features


the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 320MHz


QSL12TR Applications


There are a lot of ROHM Semiconductor
QSL12TR applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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