QS5Y1TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transition Frequency :

270MHz

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Max Collector Current :

3A

Number of Elements :

2

Terminal Position :

Dual

Operating Temperature :

150°C TJ

Terminal Form :

Gull wing

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Max Power Dissipation :

1.25W

Package / Case :

SOT-23-5 Thin, TSOT-23-5

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA 2V

Power - Max :

1.25W

Vce Saturation (Max) @ Ib, Ic :

400mV @ 50mA, 1A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Cut Tape (CT)

Configuration :

COMMON EMITTER, 2 ELEMENTS

Number of Terminations :

5

Reach Compliance Code :

not_compliant

Polarity/Channel Type :

NPN AND PNP

Published :

2011

JESD-30 Code :

R-PDSO-G5

Frequency - Transition :

300MHz 270MHz

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

30V

Collector Emitter Voltage (VCEO) :

400mV

Current - Collector Cutoff (Max) :

1μA ICBO

Lead Free :

Lead Free

Max Breakdown Voltage :

30V

Pin Count :

5

Transistor Type :

NPN, PNP (Emitter Coupled)

Factory Lead Time :

20 Weeks