QS5K2TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

100m Ω @ 2A, 4.5V

Radiation Hardening :

No

Turn-Off Delay Time :

21 ns

Drain Current-Max (Abs) (ID) :

2A

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

3.9nC @ 4.5V

Factory Lead Time :

20 Weeks

Threshold Voltage :

1.5V

Number of Pins :

5

Terminal Finish :

TIN SILVER COPPER

Lead Free :

Lead Free

Length :

2.9mm

Power Dissipation :

1.25W

Current Rating :

2A

Element Configuration :

Dual

Pulsed Drain Current-Max (IDM) :

8A

Resistance :

100MOhm

Base Part Number :

*K2

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

10

Operating Temperature :

150°C TJ

JESD-609 Code :

e1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Width :

1.6mm

Height :

850μm

Number of Terminations :

5

Pin Count :

5

Fall Time (Typ) :

10 ns

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Nominal Vgs :

1.5 V

Pbfree Code :

yes

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

8 ns

Published :

2006

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

1.25W

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

12V

Input Capacitance (Ciss) (Max) @ Vds :

175pF @ 10V

Package / Case :

SOT-23-5 Thin, TSOT-23-5

Voltage - Rated DC :

30V

Mount :

Surface Mount

Rise Time :

10ns

FET Type :

2 N-Channel (Dual) Common Source

Continuous Drain Current (ID) :

2A