PZT2907AT1
- Mfr.Part #
- PZT2907AT1
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS SS SW PNP 600MA 60V SOT223
- Stock
- 2,148
- In Stock :
- 2,148
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 600mA
- Radiation Hardening :
- No
- Transistor Type :
- PNP
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Polarity/Channel Type :
- PNP
- Length :
- 6.6802mm
- Package / Case :
- TO-261-4, TO-261AA
- hFE Min :
- 100
- Width :
- 3.7084mm
- Collector Emitter Voltage (VCEO) :
- 60V
- Factory Lead Time :
- 8 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Base Part Number :
- PZT2907A
- Voltage - Rated DC :
- -60V
- Collector Emitter Saturation Voltage :
- -1.6V
- Power Dissipation :
- 1.5W
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 200MHz
- Surface Mount :
- yes
- Height :
- 1.651mm
- Collector Base Voltage (VCBO) :
- 60V
- Max Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 1.5W
- Frequency :
- 200MHz
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 200MHz
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Number of Terminations :
- 4
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- ECCN Code :
- EAR99
- Number of Pins :
- 4
- Mounting Type :
- Surface Mount
- Weight :
- 4.535924g
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 60V
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2006
- Current Rating :
- -600mA
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -65°C~150°C TJ
- Pin Count :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Datasheets
- PZT2907AT1
PZT2907AT1 Documents

PNP -65°C~150°C TJ 10nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PZT2907AT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -1.6V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 600mA volts.
PZT2907AT1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz
PZT2907AT1G Applications
There are a lot of ON Semiconductor
PZT2907AT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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