PZT2907AT1
- Mfr.Part #
- PZT2907AT1
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS SS SW PNP 600MA 60V SOT223
- Stock
- 2,148
- In Stock :
- 2,148
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- -1.6V
- Gain Bandwidth Product :
- 200MHz
- Voltage - Rated DC :
- -60V
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 60V
- Frequency :
- 200MHz
- Factory Lead Time :
- 8 Weeks
- Transition Frequency :
- 200MHz
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 100
- Max Power Dissipation :
- 1.5W
- Weight :
- 4.535924g
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Power Dissipation :
- 1.5W
- Terminal Position :
- Dual
- Number of Terminations :
- 4
- Pin Count :
- 4
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Operating Temperature :
- -65°C~150°C TJ
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Length :
- 6.6802mm
- Case Connection :
- COLLECTOR
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 600mA
- Collector Emitter Voltage (VCEO) :
- 60V
- Published :
- 2006
- Max Breakdown Voltage :
- 60V
- Pbfree Code :
- yes
- Current Rating :
- -600mA
- Lead Free :
- Lead Free
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Height :
- 1.651mm
- Surface Mount :
- yes
- Base Part Number :
- PZT2907A
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-261-4, TO-261AA
- Width :
- 3.7084mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Number of Pins :
- 4
- Datasheets
- PZT2907AT1

PNP -65°C~150°C TJ 10nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PZT2907AT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -1.6V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 600mA volts.
PZT2907AT1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz
PZT2907AT1G Applications
There are a lot of ON Semiconductor
PZT2907AT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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