PXT2222A,115
- Mfr.Part #
- PXT2222A,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SOT89
- Stock
- 147,096
- In Stock :
- 147,096
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Width :
- 2.6mm
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Factory Lead Time :
- 4 Weeks
- VCEsat-Max :
- 1 V
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Collector-Base Capacitance-Max :
- 8pF
- Packaging :
- Tape and Reel (TR)
- Length :
- 4.6mm
- Terminal Form :
- Flat
- Polarity :
- NPN, PNP
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Max Power Dissipation :
- 1.1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Collector Emitter Saturation Voltage :
- 1V
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Power Dissipation :
- 1.1W
- Case Connection :
- COLLECTOR
- Turn Off Time-Max (toff) :
- 250ns
- Package / Case :
- TO-243AA
- Published :
- 2011
- Collector Emitter Breakdown Voltage :
- 40V
- Height :
- 1.6mm
- Current - Collector (Ic) (Max) :
- 600mA
- Collector Emitter Voltage (VCEO) :
- 40V
- Max Collector Current :
- 100mA
- Weight :
- 4.535924g
- Gain Bandwidth Product :
- 300MHz
- Frequency :
- 300MHz
- Emitter Base Voltage (VEBO) :
- 6V
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 60V
- Max Breakdown Voltage :
- 40V
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Number of Elements :
- 1
- Base Part Number :
- PXT2222A
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 300MHz
- Datasheets
- PXT2222A,115
SOT89.jpg)
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON TO-243AA Tape & Reel (TR) Surface Mount
PXT2222A,115 Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.300MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
PXT2222A,115 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
PXT2222A,115 Applications
There are a lot of Nexperia USA Inc.
PXT2222A,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| PXT2907A,115 | Nexperia | 161,976 | TRANS PNP 60V 0.6A SOT89 |
















