PUMZ2,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Power - Max :

300mW

Current - Collector (Ic) (Max) :

150mA

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Terminal Position :

Dual

Transistor Type :

NPN, PNP

Package / Case :

6-TSSOP, SC-88, SOT-363

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

100nA ICBO

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

Configuration :

SEPARATE, 2 ELEMENTS

Transistor Element Material :

SILICON

Transition Frequency :

100MHz

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 50mA / 500mV @ 5mA, 50mA

Factory Lead Time :

4 Weeks

Number of Pins :

6

Number of Elements :

2

Frequency - Transition :

100MHz 190MHz

Polarity :

NPN, PNP

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Surface Mount :

yes

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Published :

2001

JESD-609 Code :

e3

Terminal Form :

Gull wing

Pin Count :

6

Voltage - Collector Emitter Breakdown (Max) :

50V