PN4258

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Mfr.Part #
PN4258
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS PNP 12V 0.2A TO92-3
Stock
17,400
In Stock :
17,400

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Base Voltage (VCBO) :
-12V
Current - Collector Cutoff (Max) :
10nA
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
hFE Min :
30
Collector Emitter Voltage (VCEO) :
500mV
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 10mA 3V
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
350mW
Mounting Type :
Through Hole
Frequency - Transition :
700MHz
Gain Bandwidth Product :
700MHz
Mount :
Through Hole
Number of Elements :
1
Polarity :
PNP
Number of Pins :
3
Vce Saturation (Max) @ Ib, Ic :
500mV @ 5mA, 50mA
Power - Max :
350mW
RoHS Status :
RoHS Compliant
Frequency :
700MHz
Emitter Base Voltage (VEBO) :
-4.5V
Current Rating :
-200mA
Voltage - Collector Emitter Breakdown (Max) :
12V
Supplier Device Package :
TO-92-3
Element Configuration :
Single
Transistor Type :
PNP
Max Operating Temperature :
150°C
Current - Collector (Ic) (Max) :
200mA
Collector Emitter Saturation Voltage :
-500mV
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Bulk
Min Operating Temperature :
-55°C
Collector Emitter Breakdown Voltage :
12V
Max Collector Current :
200mA
Max Power Dissipation :
350mW
Voltage - Rated DC :
-12V
Datasheets
PN4258
Introducing Transistors - Bipolar (BJT) - Single onsemi PN4258 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA), Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, PN4258 pinout, PN4258 datasheet PDF, PN4258 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi PN4258 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi PN4258


PNP -55°C~150°C TJ 10nA 1 Elements TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

PN4258 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 10mA 3V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -4.5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -200mA.Supplier package TO-92-3 contains the product.The device has a 12V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 200mA volts can be achieved.

PN4258 Features


the DC current gain for this device is 30 @ 10mA 3V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -4.5V
the current rating of this device is -200mA
the supplier device package of TO-92-3


PN4258 Applications


There are a lot of ON Semiconductor
PN4258 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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