PN3646_D75Z
- Mfr.Part #
- PN3646_D75Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.3A TO92-3
- Stock
- 14,240
- In Stock :
- 14,240
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 3mA, 300mA
- Current - Collector Cutoff (Max) :
- 500nA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 350mW
- Voltage - Collector Emitter Breakdown (Max) :
- 15V
- Base Part Number :
- PN3646
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 30mA 400mV
- Supplier Device Package :
- TO-92-3
- Transistor Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Packaging :
- Tape and Box (TB)
- Current - Collector (Ic) (Max) :
- 300mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheets
- PN3646_D75Z

NPN -55°C~150°C TJ 500nA TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
PN3646_D75Z Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 30mA 400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 3mA, 300mA.This product comes in a TO-92-3 device package from the supplier.Device displays Collector Emitter Breakdown (15V maximal voltage).
PN3646_D75Z Features
the DC current gain for this device is 30 @ 30mA 400mV
the vce saturation(Max) is 500mV @ 3mA, 300mA
the supplier device package of TO-92-3
PN3646_D75Z Applications
There are a lot of ON Semiconductor
PN3646_D75Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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