PN2222TF
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- Mfr.Part #
- PN2222TF
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.6A TO92-3
- Stock
- 23,683
- In Stock ：
- 23,683
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 240mg
- Voltage - Rated DC :
- 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Factory Lead Time :
- 2 Weeks
- Frequency :
- 300MHz
- Element Configuration :
- Single
- Length :
- 5.2mm
- Height :
- 5.33mm
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 600mA
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 300MHz
- Power Dissipation :
- 625mW
- Base Part Number :
- PN2222
- hFE Min :
- 100
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Transition Frequency :
- 300MHz
- Collector Emitter Saturation Voltage :
- 1V
- Max Breakdown Voltage :
- 30V
- Terminal Position :
- BOTTOM
- Current Rating :
- 600mA
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Width :
- 4.19mm
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 30V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Mount :
- Through Hole
- Max Power Dissipation :
- 625mW
- JESD-609 Code :
- e3
- Published :
- 2004
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 60V
- Datasheets
- PN2222TF
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
PN2222TF Overview
This device has a DC current gain of 100 @ 150mA 10mV, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 600mA.In this part, there is a transition frequency of 300MHz.As a result, it can handle voltages as low as 30V volts.The maximum collector current is 600mA volts.
PN2222TF Features
the DC current gain for this device is 100 @ 150mA 10mV
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 600mA
a transition frequency of 300MHz
PN2222TF Applications
There are a lot of ON Semiconductor
PN2222TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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