PN2222TA
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- Mfr.Part #
- PN2222TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.6A TO92-3
- Stock
- 4,361
- In Stock ：
- 4,361
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 100
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Weight :
- 240mg
- Transition Frequency :
- 300MHz
- Collector Emitter Breakdown Voltage :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Collector Emitter Voltage (VCEO) :
- 30V
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Packaging :
- Tape and Box (TB)
- Mount :
- Through Hole
- Terminal Position :
- BOTTOM
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Base Part Number :
- PN2222
- Max Breakdown Voltage :
- 30V
- Published :
- 2007
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 625mW
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Frequency :
- 300MHz
- Collector Emitter Saturation Voltage :
- 1V
- Terminal Finish :
- Tin (Sn)
- Gain Bandwidth Product :
- 300MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 2 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10mV
- Max Collector Current :
- 600mA
- Current Rating :
- 600mA
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 625mW
- JESD-609 Code :
- e3
- Datasheets
- PN2222TA
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
PN2222TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10mV.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 600mA volts.
PN2222TA Features
the DC current gain for this device is 100 @ 150mA 10mV
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 600mA
a transition frequency of 300MHz
PN2222TA Applications
There are a lot of ON Semiconductor
PN2222TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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