PN2222TA
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- Mfr.Part #
- PN2222TA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.6A TO92-3
- Stock
- 4,361
- In Stock ：
- 4,361
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 300MHz
- Transition Frequency :
- 300MHz
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 625mW
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Saturation Voltage :
- 1V
- Number of Terminations :
- 3
- Terminal Position :
- BOTTOM
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Base Part Number :
- PN2222
- Collector Emitter Voltage (VCEO) :
- 30V
- Voltage - Rated DC :
- 30V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Max Breakdown Voltage :
- 30V
- Max Collector Current :
- 600mA
- Power Dissipation :
- 625mW
- Factory Lead Time :
- 2 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10mV
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Through Hole
- hFE Min :
- 100
- Collector Base Voltage (VCBO) :
- 60V
- Gain Bandwidth Product :
- 300MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- ECCN Code :
- EAR99
- Packaging :
- Tape and Box (TB)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 600mA
- Operating Temperature :
- 150°C TJ
- Weight :
- 240mg
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Published :
- 2007
- Mount :
- Through Hole
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 30V
- Datasheets
- PN2222TA
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
PN2222TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10mV.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 600mA volts.
PN2222TA Features
the DC current gain for this device is 100 @ 150mA 10mV
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 600mA
a transition frequency of 300MHz
PN2222TA Applications
There are a lot of ON Semiconductor
PN2222TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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