PN2222G
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- Mfr.Part #
- PN2222G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.6A TO92
- Stock
- 9,369
- In Stock ：
- 9,369
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- HTS Code :
- 8541.21.00.75
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- ECCN Code :
- EAR99
- Lifecycle Status :
- OBSOLETE (Last Updated: 3 days ago)
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Transition Frequency :
- 250MHz
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 3
- Turn Off Time-Max (toff) :
- 285ns
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- JESD-609 Code :
- e1
- Number of Pins :
- 3
- Base Part Number :
- PN2222
- Qualification Status :
- Not Qualified
- hFE Min :
- 35
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 1.6V
- Max Collector Current :
- 600mA
- Packaging :
- Bulk
- Collector Emitter Breakdown Voltage :
- 30V
- Mounting Type :
- Through Hole
- Current Rating :
- 600mA
- Voltage - Rated DC :
- 30V
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Gain Bandwidth Product :
- 250MHz
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Position :
- BOTTOM
- Max Power Dissipation :
- 625mW
- Collector Emitter Saturation Voltage :
- 1.6V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- Published :
- 2006
- Datasheets
- PN2222G
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
PN2222G Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.6V.A VCE saturation (Max) of 1.6V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 250MHz.A maximum collector current of 600mA volts is possible.
PN2222G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 600mA
a transition frequency of 250MHz
PN2222G Applications
There are a lot of ON Semiconductor
PN2222G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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