PN2222ATF
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- Mfr.Part #
- PN2222ATF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 1A TO92-3
- Stock
- 16,723
- In Stock ：
- 16,723
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 40V
- Collector Emitter Voltage (VCEO) :
- 40V
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Weight :
- 240mg
- Terminal Position :
- BOTTOM
- Published :
- 2007
- hFE Min :
- 100
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- PN2222
- Max Collector Current :
- 1A
- Max Power Dissipation :
- 625mW
- Factory Lead Time :
- 6 Weeks
- Number of Pins :
- 3
- Power Dissipation :
- 625mW
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Base Voltage (VCBO) :
- 75V
- Turn Off Time-Max (toff) :
- 285ns
- Current Rating :
- 1A
- Height :
- 5.33mm
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 300MHz
- ECCN Code :
- EAR99
- Frequency :
- 300MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- REACH SVHC :
- No SVHC
- Width :
- 4.19mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 40V
- Collector Emitter Saturation Voltage :
- 1V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Gain Bandwidth Product :
- 300MHz
- Length :
- 5.2mm
- Voltage - Rated DC :
- 40V
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Datasheets
- PN2222ATF
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
PN2222ATF Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 40V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
PN2222ATF Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 300MHz
PN2222ATF Applications
There are a lot of ON Semiconductor
PN2222ATF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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