PN2222ATA
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- Mfr.Part #
- PN2222ATA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 1A TO92-3
- Stock
- 4,789
- In Stock ：
- 4,789
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Transition Frequency :
- 300MHz
- Packaging :
- Tape and Box (TB)
- Collector Emitter Saturation Voltage :
- 1V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 40V
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Gain Bandwidth Product :
- 300MHz
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Current Rating :
- 1A
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Number of Pins :
- 3
- Element Configuration :
- Single
- Power Dissipation :
- 625mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 5.2mm
- Factory Lead Time :
- 6 Weeks
- Turn Off Time-Max (toff) :
- 285ns
- Max Power Dissipation :
- 625mW
- Weight :
- 240mg
- hFE Min :
- 100
- Width :
- 4.19mm
- Terminal Finish :
- Tin (Sn)
- Frequency :
- 300MHz
- Collector Base Voltage (VCBO) :
- 75V
- Terminal Position :
- BOTTOM
- Collector Emitter Breakdown Voltage :
- 40V
- Published :
- 2007
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 25V
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Base Part Number :
- PN2222
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Max Collector Current :
- 1A
- Height :
- 5.33mm
- Collector Emitter Voltage (VCEO) :
- 40V
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- PN2222ATA
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
PN2222ATA Overview
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 25V volts.In extreme cases, the collector current can be as low as 1A volts.
PN2222ATA Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 300MHz
PN2222ATA Applications
There are a lot of ON Semiconductor
PN2222ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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