PN100RM

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Mfr.Part #
PN100RM
Manufacturer
Fairchild Semiconductor
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN 45V 0.5A TO92-3
Stock
3,651
In Stock :
3,651

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Voltage (VCEO) :
45V
Current Rating :
500mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
625mW
Current - Collector Cutoff (Max) :
50nA
Number of Pins :
3
Voltage - Rated DC :
45V
Collector Emitter Breakdown Voltage :
45V
Collector Base Voltage (VCBO) :
75V
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Packaging :
Tape and Reel (TR)
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Through Hole
RoHS Status :
RoHS Compliant
Collector Emitter Saturation Voltage :
400mV
Frequency :
250MHz
Max Power Dissipation :
625mW
Vce Saturation (Max) @ Ib, Ic :
400mV @ 20mA, 200mA
Gain Bandwidth Product :
250MHz
hFE Min :
100
Emitter Base Voltage (VEBO) :
6V
Lead Free :
Contains Lead
Mount :
Through Hole
Published :
2011
Element Configuration :
Single
Number of Elements :
1
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 5V
Base Part Number :
PN100
Weight :
201mg
Transistor Type :
NPN
Max Collector Current :
500mA
Max Breakdown Voltage :
45V
Datasheets
PN100RM
Introducing Transistors - Bipolar (BJT) - Single Fairchild Semiconductor PN100RM from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Base Part Number:PN100, PN100RM pinout, PN100RM datasheet PDF, PN100RM amp .Beyond Transistors - Bipolar (BJT) - Single Fairchild Semiconductor PN100RM ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor PN100RM


NPN -55°C~150°C TJ 50nA 1 Elements TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole

PN100RM Overview


This device has a DC current gain of 100 @ 150mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 400mV.A VCE saturation (Max) of 400mV @ 20mA, 200mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A breakdown input voltage of 45V volts can be used.A maximum collector current of 500mA volts is possible.

PN100RM Features


the DC current gain for this device is 100 @ 150mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 20mA, 200mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA


PN100RM Applications


There are a lot of ON Semiconductor
PN100RM applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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