PN100RM

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Mfr.Part #
PN100RM
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN 45V 0.5A TO92-3
Stock
31,646
In Stock :
31,646

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
-55°C~150°C TJ
Gain Bandwidth Product :
250MHz
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Collector Base Voltage (VCBO) :
75V
Element Configuration :
Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 5V
Collector Emitter Voltage (VCEO) :
45V
Current Rating :
500mA
RoHS Status :
RoHS Compliant
Emitter Base Voltage (VEBO) :
6V
Base Part Number :
PN100
Published :
2011
Max Collector Current :
500mA
Weight :
201mg
Vce Saturation (Max) @ Ib, Ic :
400mV @ 20mA, 200mA
Frequency :
250MHz
hFE Min :
100
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Voltage - Rated DC :
45V
Max Breakdown Voltage :
45V
Mount :
Through Hole
Power Dissipation :
625mW
Collector Emitter Breakdown Voltage :
45V
Lead Free :
Contains Lead
Number of Elements :
1
Number of Pins :
3
Packaging :
Tape and Reel (TR)
Collector Emitter Saturation Voltage :
400mV
Max Power Dissipation :
625mW
Transistor Type :
NPN
Current - Collector Cutoff (Max) :
50nA
Mounting Type :
Through Hole
Datasheets
PN100RM
Introducing Transistors - Bipolar (BJT) - Single onsemi PN100RM from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Base Part Number:PN100, Number of Pins:3, Mounting Type:Through Hole, PN100RM pinout, PN100RM datasheet PDF, PN100RM amp .Beyond Transistors - Bipolar (BJT) - Single onsemi PN100RM ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi PN100RM


NPN -55°C~150°C TJ 50nA 1 Elements TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole

PN100RM Overview


This device has a DC current gain of 100 @ 150mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 400mV.A VCE saturation (Max) of 400mV @ 20mA, 200mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A breakdown input voltage of 45V volts can be used.A maximum collector current of 500mA volts is possible.

PN100RM Features


the DC current gain for this device is 100 @ 150mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 20mA, 200mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA


PN100RM Applications


There are a lot of ON Semiconductor
PN100RM applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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