PN100A_D74Z

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Mfr.Part #
PN100A_D74Z
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN 45V 0.5A TO92-3
Stock
45,191
In Stock :
45,191

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Emitter Base Voltage (VEBO) :
6V
Transistor Type :
NPN
Mount :
Through Hole
RoHS Status :
RoHS Compliant
Collector Base Voltage (VCBO) :
75V
Element Configuration :
Single
Vce Saturation (Max) @ Ib, Ic :
400mV @ 20mA, 200mA
Frequency :
250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
300 @ 10mA 1V
Collector Emitter Breakdown Voltage :
45V
Max Power Dissipation :
625mW
Mounting Type :
Through Hole
hFE Min :
300
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Base Part Number :
PN100
Power Dissipation :
625mW
Gain Bandwidth Product :
250MHz
Operating Temperature :
-55°C~150°C TJ
Collector Emitter Voltage (VCEO) :
45V
Current - Collector Cutoff (Max) :
50nA
Max Collector Current :
500mA
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Elements :
1
Collector Emitter Saturation Voltage :
400mV
Number of Pins :
3
Packaging :
Tape and Box (TB)
Lead Free :
Lead Free
Datasheets
PN100A_D74Z
Introducing Transistors - Bipolar (BJT) - Single onsemi PN100A_D74Z from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Base Part Number:PN100, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Number of Pins:3, PN100A_D74Z pinout, PN100A_D74Z datasheet PDF, PN100A_D74Z amp .Beyond Transistors - Bipolar (BJT) - Single onsemi PN100A_D74Z ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi PN100A_D74Z


NPN -55°C~150°C TJ 50nA 1 Elements TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

PN100A_D74Z Overview


This device has a DC current gain of 300 @ 10mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 400mV.A VCE saturation (Max) of 400mV @ 20mA, 200mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.A maximum collector current of 500mA volts is possible.

PN100A_D74Z Features


the DC current gain for this device is 300 @ 10mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 20mA, 200mA
the emitter base voltage is kept at 6V


PN100A_D74Z Applications


There are a lot of ON Semiconductor
PN100A_D74Z applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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