PN100A
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- Mfr.Part #
- PN100A
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A TO92-3
- Stock
- 1,376
- In Stock ：
- 1,376
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 15 Weeks
- JESD-609 Code :
- e3
- Base Part Number :
- PN100
- Power Dissipation :
- 625mW
- Gain Bandwidth Product :
- 250MHz
- Transition Frequency :
- 250MHz
- Frequency :
- 250MHz
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Current Rating :
- 500mA
- Current - Collector Cutoff (Max) :
- 50nA
- Collector Emitter Saturation Voltage :
- 400mV
- Operating Temperature :
- -55°C~150°C TJ
- hFE Min :
- 300
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 625mW
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Transistor Type :
- NPN
- Weight :
- 201mg
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Base Voltage (VCBO) :
- 75V
- Voltage - Rated DC :
- 45V
- Collector Emitter Breakdown Voltage :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 1V
- Max Collector Current :
- 500mA
- VCEsat-Max :
- 0.2 V
- Collector-Base Capacitance-Max :
- 4.5pF
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 20mA, 200mA
- Collector Emitter Voltage (VCEO) :
- 45V
- Packaging :
- Bulk
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 3
- Published :
- 2008
- Mounting Type :
- Through Hole
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- Datasheets
- PN100A
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 50nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
PN100A Overview
In this device, the DC current gain is 300 @ 10mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 20mA, 200mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
PN100A Features
the DC current gain for this device is 300 @ 10mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 20mA, 200mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 250MHz
PN100A Applications
There are a lot of ON Semiconductor
PN100A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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