PN100
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- Mfr.Part #
- PN100
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A TO92-3
- Stock
- 21,826
- In Stock ：
- 21,826
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2008
- Weight :
- 201mg
- VCEsat-Max :
- 0.2 V
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 75V
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 6V
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 250MHz
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 625mW
- Factory Lead Time :
- 15 Weeks
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Current - Collector Cutoff (Max) :
- 50nA
- Collector Emitter Breakdown Voltage :
- 45V
- Max Collector Current :
- 500mA
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 300
- Collector Emitter Voltage (VCEO) :
- 45V
- Mounting Type :
- Through Hole
- Power Dissipation :
- 625mW
- Pbfree Code :
- yes
- Transition Frequency :
- 250MHz
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 400mV
- Current Rating :
- 500mA
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 20mA, 200mA
- Packaging :
- Bulk
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Transistor Type :
- NPN
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Voltage - Rated DC :
- 45V
- Element Configuration :
- Single
- Frequency :
- 250MHz
- Collector-Base Capacitance-Max :
- 4.5pF
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 1V
- Base Part Number :
- PN100
- Transistor Application :
- AMPLIFIER
- Datasheets
- PN100
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 50nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
PN100A Overview
In this device, the DC current gain is 300 @ 10mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 20mA, 200mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
PN100A Features
the DC current gain for this device is 300 @ 10mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 20mA, 200mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 250MHz
PN100A Applications
There are a lot of ON Semiconductor
PN100A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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