PMZB600UNEYL

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Resistance :

470mOhm

Pin Count :

3

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

20V

Package / Case :

3-XFDFN

Terminal Form :

NO LEAD

Published :

2014

Vgs(th) (Max) @ Id :

950mV @ 250μA

Drain to Source Voltage (Vdss) :

20V

Power Dissipation-Max :

360mW Ta 2.7W Tc

Gate Charge (Qg) (Max) @ Vgs :

0.7nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Terminal Position :

BOTTOM

Rds On (Max) @ Id, Vgs :

620m Ω @ 600mA, 4.5V

Drain Current-Max (Abs) (ID) :

0.6A

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

600mA Ta

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Number of Terminations :

3

Mount :

Surface Mount

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

600mA

FET Type :

N-Channel

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

21.3pF @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

8 Weeks

Vgs (Max) :

±8V