PMZB290UNE,315

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

8V

Case Connection :

DRAIN

FET Type :

N-Channel

Rise Time :

4ns

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

86 ns

Input Capacitance (Ciss) (Max) @ Vds :

83pF @ 10V

Transistor Element Material :

SILICON

Terminal Position :

BOTTOM

Vgs (Max) :

±8V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Continuous Drain Current (ID) :

1A

Rds On (Max) @ Id, Vgs :

380m Ω @ 500mA, 4.5V

Power Dissipation :

715mW

Operating Temperature :

-55°C~150°C TJ

Max Dual Supply Voltage :

20V

Gate Charge (Qg) (Max) @ Vgs :

0.68nC @ 4.5V

Drain Current-Max (Abs) (ID) :

1A

Current - Continuous Drain (Id) @ 25°C :

1A Ta

Number of Terminations :

3

Transistor Application :

SWITCHING

Published :

2012

Vgs(th) (Max) @ Id :

950mV @ 250μA

Contact Plating :

Tin

Factory Lead Time :

8 Weeks

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Power Dissipation-Max :

360mW Ta 2.7W Tc

Package / Case :

3-XFDFN

Surface Mount :

yes

JESD-609 Code :

e3

Pin Count :

3

Radiation Hardening :

No

Turn On Delay Time :

6 ns

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

20V

Fall Time (Typ) :

31 ns