PMZB350UPE,315
- Mfr.Part #
- PMZB350UPE,315
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- NOW NEXPERIA PMZB350UPE - SMALL
- Stock
- 45,443
- In Stock :
- 45,443
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- 3-XFDFN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 1A Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 1.9nC @ 4.5V
- Published :
- 2012
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Terminal Finish :
- Tin (Sn)
- Vgs (Max) :
- ±8V
- Rise Time :
- 5ns
- Fall Time (Typ) :
- 9 ns
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- FET Type :
- P-Channel
- Turn On Delay Time :
- 4 ns
- Max Dual Supply Voltage :
- -20V
- Drain to Source Voltage (Vdss) :
- 20V
- Turn-Off Delay Time :
- 26 ns
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 127pF @ 10V
- Vgs(th) (Max) @ Id :
- 950mV @ 250μA
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Factory Lead Time :
- 8 Weeks
- Rds On (Max) @ Id, Vgs :
- 450m Ω @ 300mA, 4.5V
- Continuous Drain Current (ID) :
- 1A
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 8V
- Power Dissipation-Max :
- 360mW Ta 3.125W Tc
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- PMZB350UPE,315

P-Channel Tape & Reel (TR) 450m Ω @ 300mA, 4.5V ±8V 127pF @ 10V 1.9nC @ 4.5V 20V 3-XFDFN
PMZB350UPE,315 Overview
A device's maximum input capacitance is 127pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 1A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 26 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 4 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.Powered by -20V, it supports maximum dual supply voltages.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (1.8V 4.5V) to reduce its overall power consumption.
PMZB350UPE,315 Features
a continuous drain current (ID) of 1A
the turn-off delay time is 26 ns
a 20V drain to source voltage (Vdss)
PMZB350UPE,315 Applications
There are a lot of Nexperia USA Inc.
PMZB350UPE,315 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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