PMZ1000UN,315

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Continuous Drain Current (ID) :

480mA

Input Capacitance (Ciss) (Max) @ Vds :

43pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

1Ohm

Vgs (Max) :

±8V

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

480mA Ta

Factory Lead Time :

8 Weeks

Vgs(th) (Max) @ Id :

950mV @ 250μA

Package / Case :

SC-101, SOT-883

Surface Mount :

yes

Gate to Source Voltage (Vgs) :

8V

Rise Time :

7.5ns

Power Dissipation-Max :

350mW Ta

Gate Charge (Qg) (Max) @ Vgs :

0.89nC @ 4.5V

Turn-Off Delay Time :

18 ns

Power Dissipation :

350mW

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

4 ns

Rds On (Max) @ Id, Vgs :

1 Ω @ 200mA, 4.5V

Published :

2010

Terminal Position :

BOTTOM

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Case Connection :

DRAIN

Max Dual Supply Voltage :

30V

Radiation Hardening :

No

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Transistor Application :

SWITCHING

Number of Elements :

1

Number of Pins :

3

Fall Time (Typ) :

4.5 ns

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

0.48A