PMWD20XN,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PDSO-G8

Power - Max :

4.2W

DS Breakdown Voltage-Min :

20V

Drain to Source Voltage (Vdss) :

20V

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Mounting Type :

Surface Mount

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Drain Current-Max (Abs) (ID) :

10.4A

Current - Continuous Drain (Id) @ 25°C :

10.4A

Input Capacitance (Ciss) (Max) @ Vds :

740pF @ 16V

Series :

TrenchMOS™

FET Feature :

Logic Level Gate

Rds On (Max) @ Id, Vgs :

22m Ω @ 4.2A, 10V

Pin Count :

8

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

FET Type :

2 N-Channel (Dual)

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.022Ohm

Published :

2005

JEDEC-95 Code :

MO-153

Transistor Element Material :

SILICON

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

11.6nC @ 4.5V

Reach Compliance Code :

Unknown