PMN70XPE,115
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- Mfr.Part #
- PMN70XPE,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- NEXPERIA PMN70XPE - SMALL SIGNAL
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Fall Time (Typ) :
- 17 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 602pF @ 10V
- Turn-Off Delay Time :
- 40 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Vgs (Max) :
- ±12V
- Package / Case :
- SC-74, SOT-457
- Current - Continuous Drain (Id) @ 25°C :
- 3.2A Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 7.8nC @ 4.5V
- Power Dissipation-Max :
- 500mW Ta 6.25W Tc
- Published :
- 2012
- Rds On (Max) @ Id, Vgs :
- 85m Ω @ 2A, 4.5V
- Factory Lead Time :
- 6 Weeks
- Pin Count :
- 6
- Vgs(th) (Max) @ Id :
- 1.25V @ 250μA
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- FET Type :
- P-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 6
- Gate to Source Voltage (Vgs) :
- -1V
- Drain to Source Breakdown Voltage :
- -20V
- Element Configuration :
- Single
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 3.2A
- Max Dual Supply Voltage :
- -20V
- Turn On Delay Time :
- 7 ns
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 20V
- Rise Time :
- 13ns
- Datasheets
- PMN70XPE,115
P-Channel Tape & Reel (TR) 85m Ω @ 2A, 4.5V ±12V 602pF @ 10V 7.8nC @ 4.5V 20V SC-74, SOT-457
PMN70XPE,115 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 602pF @ 10V.This device conducts a continuous drain current (ID) of 3.2A, which is the maximum continuous current transistor can conduct.Using VGS=-20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -20V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 40 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be -1V.With -20V power, it supports a dual voltage supply of up to maximum.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 4.5V volts (2.5V 4.5V).
PMN70XPE,115 Features
a continuous drain current (ID) of 3.2A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 40 ns
a 20V drain to source voltage (Vdss)
PMN70XPE,115 Applications
There are a lot of Nexperia USA Inc.
PMN70XPE,115 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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