PMN55LN,135

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2V @ 1mA

Number of Terminations :

6

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 20V

Drain-source On Resistance-Max :

0.065Ohm

Package / Case :

SC-74, SOT-457

Gate Charge (Qg) (Max) @ Vgs :

13.1nC @ 10V

Drain Current-Max (Abs) (ID) :

4.1A

Published :

1997

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

20V

Terminal Finish :

Tin (Sn)

Series :

TrenchMOS™

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

4.1A Tc

DS Breakdown Voltage-Min :

20V

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

65m Ω @ 2.5A, 10V

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

HTS Code :

8541.29.00.75

Vgs (Max) :

±15V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Pin Count :

6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Power Dissipation-Max :

1.75W Tc

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Number of Elements :

1

JESD-30 Code :

R-PDSO-G6