PMN52XPX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

20V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

530mW Ta 4.46W Tc

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

20V

Vgs (Max) :

±12V

JESD-30 Code :

R-PDSO-G6

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Continuous Drain Current (ID) :

3.7A

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

763pF @ 10V

Pin Count :

6

Mounting Type :

Surface Mount

Mount :

Surface Mount

Reference Standard :

IEC-60134

Published :

2016

Drain-source On Resistance-Max :

0.062Ohm

Rds On (Max) @ Id, Vgs :

62m Ω @ 3.7A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

900mV @ 250μA

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Package / Case :

SC-74, SOT-457

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Number of Terminations :

6