PMN34UN,135

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PDSO-G6

Drain Current-Max (Abs) (ID) :

4.9A

Input Capacitance (Ciss) (Max) @ Vds :

790pF @ 25V

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

6

JESD-609 Code :

e3

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±8V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

9.9nC @ 4.5V

Power Dissipation-Max :

1.75W Tc

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

700mV @ 1mA

Rds On (Max) @ Id, Vgs :

46m Ω @ 2A, 4.5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

1997

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

30V

Package / Case :

SC-74, SOT-457

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Terminal Position :

Dual

Series :

TrenchMOS™

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

HTS Code :

8541.29.00.75

Current - Continuous Drain (Id) @ 25°C :

4.9A Tc

Drain-source On Resistance-Max :

0.054Ohm

Drain to Source Voltage (Vdss) :

30V

ECCN Code :

EAR99