PMN34LN,135

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchMOS™

Published :

1997

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

13.1nC @ 10V

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 1mA

HTS Code :

8541.29.00.75

Terminal Form :

Gull wing

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.034Ohm

Power Dissipation-Max :

1.75W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

5.7A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

5.7A

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 20V

JESD-609 Code :

e3

Number of Terminations :

6

JESD-30 Code :

R-PDSO-G6

DS Breakdown Voltage-Min :

20V

Rds On (Max) @ Id, Vgs :

34m Ω @ 2.5A, 10V

Drain to Source Voltage (Vdss) :

20V

Package / Case :

SC-74, SOT-457

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Vgs (Max) :

±15V

Packaging :

Tape and Reel (TR)

Pin Count :

6

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V