PMK50XP518

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Rds On Max :

10 MΩ

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

950mV @ 250μA

Turn-Off Delay Time :

82 ns

Current - Continuous Drain (Id) @ 25°C :

7.9A Tc

Max Dual Supply Voltage :

-20V

Continuous Drain Current (ID) :

7.9A

Rise Time :

7.5ns

Gate to Source Voltage (Vgs) :

12V

Input Capacitance (Ciss) (Max) @ Vds :

1020pF @ 20V

Input Capacitance :

1.02nF

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Series :

TrenchMOS™

FET Type :

P-Channel

RoHS Status :

RoHS Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rds On (Max) @ Id, Vgs :

50mOhm @ 2.8A, 4.5V

Number of Pins :

8

Power Dissipation :

5W

Published :

2010

Contact Plating :

Gold

Drain to Source Resistance :

50mOhm

Drain to Source Voltage (Vdss) :

20V

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Supplier Device Package :

8-SO

Power Dissipation-Max :

5W Tc

Drain to Source Breakdown Voltage :

-20V

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

150°C

Fall Time (Typ) :

35 ns

Turn On Delay Time :

8.5 ns

Mounting Type :

Surface Mount

Vgs (Max) :

±12V

Element Configuration :

Single

Factory Lead Time :

16 Weeks