PMK50XP,518

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

950mV @ 250μA

FET Type :

P-Channel

Drain to Source Resistance :

50mOhm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

1020pF @ 20V

Element Configuration :

Single

Supplier Device Package :

8-SO

Published :

2010

Mount :

Surface Mount

Power Dissipation :

5W

Number of Pins :

8

Fall Time (Typ) :

35 ns

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Input Capacitance :

1.02nF

Power Dissipation-Max :

5W Tc

Max Dual Supply Voltage :

-20V

Rds On (Max) @ Id, Vgs :

50mOhm @ 2.8A, 4.5V

Turn-Off Delay Time :

82 ns

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

-20V

Current - Continuous Drain (Id) @ 25°C :

7.9A Tc

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

12V

Contact Plating :

Gold

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Rise Time :

7.5ns

Factory Lead Time :

16 Weeks

Operating Temperature :

-55°C~150°C TJ

Series :

TrenchMOS™

Rds On Max :

10 MΩ

Vgs (Max) :

±12V

Max Operating Temperature :

150°C

Min Operating Temperature :

-55°C

Continuous Drain Current (ID) :

7.9A

Turn On Delay Time :

8.5 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V