PMFPB8032XP,115
- Mfr.Part #
- PMFPB8032XP,115
- Manufacturer
- Nexperia
- Package / Case
- 6-UDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 2.7A HUSON6
- Stock
- 6,506
- In Stock :
- 6,506
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 2.7A Ta
- Terminal Finish :
- Tin (Sn)
- Rise Time :
- 14ns
- Gate to Source Voltage (Vgs) :
- -600mV
- Published :
- 2012
- Mounting Type :
- Surface Mount
- Number of Pins :
- 6
- Packaging :
- Tape and Reel (TR)
- Number of Channels :
- 1
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- FET Type :
- P-Channel
- Drain to Source Breakdown Voltage :
- -20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Factory Lead Time :
- 8 Weeks
- FET Feature :
- Schottky Diode (Isolated)
- Rds On (Max) @ Id, Vgs :
- 102m Ω @ 2.7A, 4.5V
- Pin Count :
- 6
- Turn On Delay Time :
- 6 ns
- Vgs (Max) :
- ±12V
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- 6-UDFN Exposed Pad
- Continuous Drain Current (ID) :
- 2.7A
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 550pF @ 10V
- Max Dual Supply Voltage :
- -20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V
- Fall Time (Typ) :
- 50 ns
- Turn-Off Delay Time :
- 120 ns
- Power Dissipation-Max :
- 485mW Ta 6.25W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 8.6nC @ 4.5V
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- PMFPB8032XP,115

P-Channel Tape & Reel (TR) 102m Ω @ 2.7A, 4.5V ±12V 550pF @ 10V 8.6nC @ 4.5V 20V 6-UDFN Exposed Pad
PMFPB8032XP,115 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 550pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2.7A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -20V, and this device has a drainage-to-source breakdown voltage of -20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 120 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from -600mV to 1.In addition to -20V, it supports dual voltages up to the maximum.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (4.5V), this device contributes to a reduction in overall power consumption.
PMFPB8032XP,115 Features
a continuous drain current (ID) of 2.7A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 120 ns
a 20V drain to source voltage (Vdss)
PMFPB8032XP,115 Applications
There are a lot of Nexperia USA Inc.
PMFPB8032XP,115 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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