PMFPB6532UP,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

150°C TJ

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

Surface Mount :

yes

Vgs(th) (Max) @ Id :

1V @ 250μA

FET Type :

P-Channel

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

3.5A

Vgs (Max) :

±8V

Rds On (Max) @ Id, Vgs :

70m Ω @ 1A, 4.5V

Mounting Type :

Surface Mount

Package / Case :

6-UDFN Exposed Pad

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 10V

Published :

2012

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

20V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

520mW Ta 8.3W Tc

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Configuration :

Single

Pin Count :

6

Packaging :

Tape and Reel (TR)

FET Feature :

Schottky Diode (Isolated)