PMF290XN,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

20V

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

1A

Transistor Application :

SWITCHING

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Series :

TrenchMOS™

DS Breakdown Voltage-Min :

20V

Rds On (Max) @ Id, Vgs :

350m Ω @ 200mA, 4.5V

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

0.72nC @ 4.5V

Terminal Form :

Gull wing

Power Dissipation-Max :

560mW Tc

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Package / Case :

SC-70, SOT-323

JESD-30 Code :

R-PDSO-G3

HTS Code :

8541.29.00.75

Published :

1997

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

1A Tc

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

34pF @ 20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Vgs (Max) :

±12V

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.35Ohm