PMF280UN,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

20V

Gate Charge (Qg) (Max) @ Vgs :

0.89nC @ 4.5V

Vgs (Max) :

±8V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

20V

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Published :

1997

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

45pF @ 20V

Drain Current-Max (Abs) (ID) :

1.02A

Drain-source On Resistance-Max :

0.34Ohm

Rds On (Max) @ Id, Vgs :

340m Ω @ 200mA, 4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

FET Type :

N-Channel

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Pin Count :

3

Surface Mount :

yes

Number of Terminations :

3

Package / Case :

SC-70, SOT-323

JESD-30 Code :

R-PDSO-G3

Operating Mode :

ENHANCEMENT MODE

HTS Code :

8541.29.00.75

Vgs(th) (Max) @ Id :

1V @ 250μA

Power Dissipation-Max :

560mW Tc

Series :

TrenchMOS™

Current - Continuous Drain (Id) @ 25°C :

1.02A Tc

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Terminal Position :

Dual

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ