PMCXB900UEZ
- Mfr.Part #
- PMCXB900UEZ
- Manufacturer
- Nexperia
- Package / Case
- 6-XFDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET N/P-CH 20V 600/500MA 6DFN
- Stock
- 53,562
- In Stock :
- 53,562
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Radiation Hardening :
- No
- FET Type :
- N and P-Channel Complementary
- Number of Pins :
- 6
- Pin Count :
- 6
- Transistor Application :
- SWITCHING
- Package / Case :
- 6-XFDFN Exposed Pad
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 4 Weeks
- Gate to Source Voltage (Vgs) :
- 8V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Gate Charge (Qg) (Max) @ Vgs :
- 0.7nC @ 4.5V
- Vgs(th) (Max) @ Id :
- 950mV @ 250μA
- Rds On (Max) @ Id, Vgs :
- 620m Ω @ 600mA, 4.5V
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 2
- DS Breakdown Voltage-Min :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 21.3pF @ 10V
- Drain to Source Voltage (Vdss) :
- 20V
- FET Feature :
- Logic Level Gate
- Number of Terminations :
- 6
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Case Connection :
- DRAIN
- Published :
- 2015
- Packaging :
- Tape and Reel (TR)
- Configuration :
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Max Power Dissipation :
- 265mW
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 600mA 500mA
- Continuous Drain Current (ID) :
- 500mA
- Surface Mount :
- yes
- Series :
- TrenchFET®
- Datasheets
- PMCXB900UEZ
PMCXB900UEZ Documents

PMCXB900UEZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Nexperia USA Inc. stock available at
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