PIMZ2,125

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Emitter Base Voltage (VEBO) :

7V

Frequency :

100MHz

Polarity :

NPN, PNP

Max Power Dissipation :

300mW

JESD-609 Code :

e3

Number of Pins :

6

Max Collector Current :

150mA

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 50mA / 500mV @ 5mA, 50mA

Factory Lead Time :

4 Weeks

Published :

2009

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Number of Elements :

2

Collector Base Voltage (VCBO) :

60V

Current - Collector Cutoff (Max) :

100nA ICBO

Mount :

Surface Mount

Transition Frequency :

100MHz

Power Dissipation :

300mW

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Frequency - Transition :

100MHz 190MHz

Terminal Finish :

Tin (Sn)

Operating Temperature :

150°C TJ

Collector Emitter Voltage (VCEO) :

50V

Terminal Form :

Gull wing

Transistor Type :

NPN, PNP

Collector Emitter Breakdown Voltage :

50V

Package / Case :

SC-74, SOT-457

Radiation Hardening :

No

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V