PIMZ2,125

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Frequency - Transition :

100MHz 190MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Published :

2009

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Power Dissipation :

300mW

Number of Pins :

6

Max Collector Current :

150mA

Transistor Type :

NPN, PNP

Factory Lead Time :

4 Weeks

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 50mA / 500mV @ 5mA, 50mA

Collector Base Voltage (VCBO) :

60V

Number of Elements :

2

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

50V

Radiation Hardening :

No

Pin Count :

6

Max Power Dissipation :

300mW

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

7V

Transistor Application :

SWITCHING

Package / Case :

SC-74, SOT-457

Current - Collector Cutoff (Max) :

100nA ICBO

Operating Temperature :

150°C TJ

Polarity :

NPN, PNP

Terminal Position :

Dual

Terminal Form :

Gull wing

Transition Frequency :

100MHz

Frequency :

100MHz

Number of Terminations :

6

Collector Emitter Breakdown Voltage :

50V