PHT4NQ10LT,135

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

4

Drain to Source Voltage (Vdss) :

100V

Input Capacitance (Ciss) (Max) @ Vds :

374pF @ 25V

Qualification Status :

Not Qualified

Pin Count :

4

Vgs (Max) :

±16V

Packaging :

Tape and Reel (TR)

Package / Case :

TO-261-4, TO-261AA

Additional Feature :

LOGIC LEVEL COMPATIBLE

Terminal Position :

Dual

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

12.2nC @ 5V

Drain-source On Resistance-Max :

0.25Ohm

ECCN Code :

EAR99

FET Type :

N-Channel

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Operating Temperature :

-65°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

5V

Power Dissipation-Max :

6.9W Tc

DS Breakdown Voltage-Min :

100V

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-G4

Vgs(th) (Max) @ Id :

2V @ 1mA

Drain Current-Max (Abs) (ID) :

3.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

HTS Code :

8541.29.00.75

Current - Continuous Drain (Id) @ 25°C :

3.5A Tc

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Published :

1997

Series :

TrenchMOS™

Rds On (Max) @ Id, Vgs :

250m Ω @ 1.75A, 5V

JESD-609 Code :

e3

Surface Mount :

yes