PHPT61002PYCX
- Mfr.Part #
- PHPT61002PYCX
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- NEXPERIA PHPT61002PYC - 100V, 2A
- Stock
- 4,218
- In Stock :
- 4,218
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- -8V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 1.5V
- Vce Saturation (Max) @ Ib, Ic :
- 110mV @ 50mA, 500mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 125MHz
- Continuous Collector Current :
- -2A
- Frequency :
- 125MHz
- Published :
- 2014
- Operating Temperature :
- 175°C TJ
- Max Breakdown Voltage :
- 100V
- Max Collector Current :
- 2A
- Number of Terminations :
- 4
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- COLLECTOR
- Package / Case :
- SC-100, SOT-669
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 100V
- Number of Pins :
- 5
- REACH SVHC :
- No SVHC
- Configuration :
- Single
- Power - Max :
- 1.25W
- Base Part Number :
- PHPT61002
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 8 Weeks
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-G4
- Collector Emitter Saturation Voltage :
- -110mV
- Power Dissipation :
- 25W
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- -100V
- Pin Count :
- 4
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 100V
- Max Power Dissipation :
- 25W
- Datasheets
- PHPT61002PYCX
PHPT61002PYCX Documents

PNP 175°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP SC-100, SOT-669 Tape & Reel (TR) Surface Mount
PHPT61002PYCX Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 500mA 1.5V DC current gain.As it features a collector emitter saturation voltage of -110mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -2A.Keeping the emitter base voltage at -8V can result in a high level of efficiency.There is a transition frequency of 125MHz in the part.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 2A volts.
PHPT61002PYCX Features
the DC current gain for this device is 100 @ 500mA 1.5V
a collector emitter saturation voltage of -110mV
the vce saturation(Max) is 110mV @ 50mA, 500mA
the emitter base voltage is kept at -8V
a transition frequency of 125MHz
PHPT61002PYCX Applications
There are a lot of Nexperia USA Inc.
PHPT61002PYCX applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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