PHPT61002PYCX
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- Mfr.Part #
- PHPT61002PYCX
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- NEXPERIA PHPT61002PYC - 100V, 2A
- Stock
- 4,218
- In Stock ：
- 4,218
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 5
- Vce Saturation (Max) @ Ib, Ic :
- 110mV @ 50mA, 500mA
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Saturation Voltage :
- -110mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 1.5V
- Continuous Collector Current :
- -2A
- Package / Case :
- SC-100, SOT-669
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- Number of Terminations :
- 4
- Max Power Dissipation :
- 25W
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- -8V
- Published :
- 2014
- Power Dissipation :
- 25W
- JESD-30 Code :
- R-PSSO-G4
- Max Collector Current :
- 2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- -100V
- Pin Count :
- 4
- Transistor Type :
- PNP
- Max Breakdown Voltage :
- 100V
- Transition Frequency :
- 125MHz
- Operating Temperature :
- 175°C TJ
- Case Connection :
- COLLECTOR
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 125MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Breakdown Voltage :
- 100V
- Base Part Number :
- PHPT61002
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 100V
- Power - Max :
- 1.25W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Datasheets
- PHPT61002PYCX
PNP 175°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP SC-100, SOT-669 Tape & Reel (TR) Surface Mount
PHPT61002PYCX Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 500mA 1.5V DC current gain.As it features a collector emitter saturation voltage of -110mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -2A.Keeping the emitter base voltage at -8V can result in a high level of efficiency.There is a transition frequency of 125MHz in the part.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 2A volts.
PHPT61002PYCX Features
the DC current gain for this device is 100 @ 500mA 1.5V
a collector emitter saturation voltage of -110mV
the vce saturation(Max) is 110mV @ 50mA, 500mA
the emitter base voltage is kept at -8V
a transition frequency of 125MHz
PHPT61002PYCX Applications
There are a lot of Nexperia USA Inc.
PHPT61002PYCX applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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